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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1712
DESCRIPTION *With TO-3PFa package *Complement to type 2SB1157 *High transition frequency fT *Satisfactory linearity of hFE *Wide area of safe operation APPLICATIONS *For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 8 60 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD1712
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
2.0
V
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
1.8
V A
ICBO
Collector cut-off current
VCB=100V; IE=0
50
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
A
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE -2
DC current gain
IC=1A ; VCE=5V
60
200
hFE -3
DC current gain
IC=3A ; VCE=5V
20
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
70
pF
fT
Transition frequency
IC=0.5A ; VCE=5V
20
MHz
hFE-2 classifications Q 60-120 S 80-60 P 100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1712
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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